Microrelays for batch transfer integration in RF systems

V. Milanovic, M. Maharbiz, A. Singh, B. Warneke, Ningning Zhou, H. Chan, K. Pister
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引用次数: 34

Abstract

This paper presents the first implementation of batch-transferred microrelays for a broad range of RF applications and substrates. The transferred relays include a variety of electrostatic pull-down type structures, as well as see-saw type structures. The batch-transfer methodology allows integration of optimized MEMS in RF systems on substrates such as sapphire, GaAs, and even CMOS. Gold-to-gold contact series microrelays with insertion loss of <0.15 dB, and isolation better than 36 dB at frequencies from 45 MHz to 40.0 GHz are demonstrated, as well as shunt switches with >40 dB of isolation and <0.12 dB insertion loss in that frequency range. A novel device structure which combines the benefits of see-saw operation and both shunt and series switching was shown to improve isolation of a single switch by /spl sim/8 dB while maintaining low insertion loss.
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射频系统中批量传输集成的微继电器
本文提出了批量传输微继电器的第一个实现,用于广泛的射频应用和衬底。所述转移继电器包括各种静电下拉式结构,以及跷跷板式结构。批量传输方法允许将优化的MEMS集成到基片(如蓝宝石,GaAs,甚至CMOS)上的RF系统中。金对金触点系列微继电器,隔离的插入损耗为40 dB,在该频率范围内插入损耗<0.12 dB。一种新颖的器件结构结合了跷跷板操作和并联和串联开关的优点,在保持低插入损耗的同时,将单个开关的隔离度提高了/spl sim/8 dB。
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