{"title":"A Concise Electrothermal Model to Characterize the Thermal Safe-Operating Area of Power Transistor","authors":"Jian-Hsing Lee, Gong-Kai Lin, Chun-Chih Chen, Li-Fan Chen, Chien-Wei Wang, Shao-Chang Huang, Ching-Ho Li, Chih-Cherng Liao, Jung-Tsun Chuang, Ke-Horng Chen","doi":"10.1109/IRPS48203.2023.10117633","DOIUrl":null,"url":null,"abstract":"A physical model is derived to characterize the thermal safe-operating area (T-SOA) of power transistor. This model provides a concise methodology to get the precise and instant solutions of the temperature, and time to failure corresponding to IV for power transistor during the T-SOA measurement.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10117633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A physical model is derived to characterize the thermal safe-operating area (T-SOA) of power transistor. This model provides a concise methodology to get the precise and instant solutions of the temperature, and time to failure corresponding to IV for power transistor during the T-SOA measurement.
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