TDDB lifetime of asymmetric patterns and its comprehension from percolation theory

Hiroshi Miyazaki, D. Kodama
{"title":"TDDB lifetime of asymmetric patterns and its comprehension from percolation theory","authors":"Hiroshi Miyazaki, D. Kodama","doi":"10.1109/IRPS.2009.5173357","DOIUrl":null,"url":null,"abstract":"TDDB-lifetime distribution of asymmetric pattern (perpendicular-faced comb) was estimated using a 3-dimensional electrostatic model calculation and its statistical treatment based on the percolation theory. Nanometer-size small cells which represent the minimum unit of electric isolation are placed along the perimeter of an asymmetric pattern. In the model, a dielectric breakdown occurs when a series of defective cells form a path through the potential barrier. The local electric field near the cathode dictates the percolation-path length (tunneling distance). The model suggests that a negative bias at the pattern tips provides a shorter percolation path due to steep gradient of potential, resulting in a shorter lifetime. However, in contrast to the model predictions the experimental data do show only a small difference between positive and negative biases. Therefore, the theoretical estimation from the ideal electric field leads us too much shorter lifetime than the real case.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173357","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

TDDB-lifetime distribution of asymmetric pattern (perpendicular-faced comb) was estimated using a 3-dimensional electrostatic model calculation and its statistical treatment based on the percolation theory. Nanometer-size small cells which represent the minimum unit of electric isolation are placed along the perimeter of an asymmetric pattern. In the model, a dielectric breakdown occurs when a series of defective cells form a path through the potential barrier. The local electric field near the cathode dictates the percolation-path length (tunneling distance). The model suggests that a negative bias at the pattern tips provides a shorter percolation path due to steep gradient of potential, resulting in a shorter lifetime. However, in contrast to the model predictions the experimental data do show only a small difference between positive and negative biases. Therefore, the theoretical estimation from the ideal electric field leads us too much shorter lifetime than the real case.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
非对称模式的TDDB寿命及其从渗流理论的理解
采用三维静电模型计算和基于渗流理论的统计处理方法估计了非对称模式(垂直面梳)的tddb寿命分布。纳米大小的小电池代表了电隔离的最小单位,沿着不对称图案的周长放置。在该模型中,当一系列有缺陷的细胞形成一条穿过势垒的路径时,就会发生介电击穿。阴极附近的局部电场决定了渗透路径长度(隧穿距离)。该模型表明,由于电位梯度较大,模式尖端的负偏置提供了较短的渗透路径,从而导致较短的寿命。然而,与模型预测相反,实验数据确实显示出积极和消极偏差之间只有很小的差异。因此,从理想电场的理论估计导致我们的寿命比实际情况短得多。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Life-stress relationship for thin film transistor gate line interconnects on flexible substrates The mechanism of device damage during bump process for flip-chip package Very fast transient simulation and measurement methodology for ESD technology development Field effect diode for effective CDM ESD protection in 45 nm SOI technology Reliability challenges for power devices under active cycling
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1