S. Tokitoh, S. Kondo, B. Yoon, A. Namiki, K. Inukai, K. Misawa, S. Sone, H.J. Shin, Y. Matsubara, N. Ohashi, N. Kobayashi
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引用次数: 2
Abstract
The effects of CMP pressure on the via resistance yield of dual- and single-damascene interconnects consisting of porous low-k films have been investigated. Porous low-k films with different mechanical strengths (Young's modulus and hardness) were used. The via resistance yield was found to strongly depend on both the CMP pressure of the via-layer and mechanical strength of the via low-k film. Analysis of the results considering the mechanical and chemical aspects of the CMP process showed that using low-pressure CMP (1.5 psi) resulted in excellent electrical properties for Cu interconnects composed of the porous low-k (k=2.3) film with high mechanical strength (E=9.8GPa, H=1.2GPa).
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