S. Parikh, M. Naik, R. Hung, H. Dai, D. Padhi, L. Zhang, T. Pan, Kuo-Wei Liu, G. Dixit, M. Armacost
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引用次数: 1
Abstract
The paper addresses critical issues associated with 90 and 65 nm copper low k interconnects. A stable baseline with >98% yield on 1E7via and 5m long serpent was established. Electromigration (EM) and IV breakdown performance was improved by optimizing the post CMP Cu pre-treatment and the dielectric barrier obtaining EM T/sub 0.1/ lifetime of greater than 10 yrs at 1.5 MA/cm/sup 2/ and >6MV/cm IV breakdown field. Detailed characterization of the impact of the barrier process on stress migration (SM) is presented. Extendibility of the process flow to sub-90nm interconnects and advanced dielectric (k<2.7) is shown.
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