S. Loualiche, A. Le Corre, C. Vaudry, L. Henry, F. Clérot
{"title":"GSMBE single step epitaxy of pseudo buried heterostructure laser","authors":"S. Loualiche, A. Le Corre, C. Vaudry, L. Henry, F. Clérot","doi":"10.1109/ICIPRM.1993.380632","DOIUrl":null,"url":null,"abstract":"A single epitaxy step buried heterostructure laser has been fabricated. The laser was processed by using molecular beam epitaxy (MBE) grown layers, a reactive ion etching technique and self-aligned technology. The dielectric Si/sub x/N/sub y/ was used as a device lateral guiding layer. The SiN optical index is the same as InP and its optical loss and leakage current at 2V are lower than 100 cm/sup -1/ and 100 nA respectively. The device threshold current and efficiency are 30 mA and 0.2 W/A.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A single epitaxy step buried heterostructure laser has been fabricated. The laser was processed by using molecular beam epitaxy (MBE) grown layers, a reactive ion etching technique and self-aligned technology. The dielectric Si/sub x/N/sub y/ was used as a device lateral guiding layer. The SiN optical index is the same as InP and its optical loss and leakage current at 2V are lower than 100 cm/sup -1/ and 100 nA respectively. The device threshold current and efficiency are 30 mA and 0.2 W/A.<>
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