Yongxun Liu, T. Matsukawa, K. Endo, M. Masahara, K. Ishii, S. O'Uchi, H. Yamauchi, J. Tsukada, Y. Ishikawa, E. Suzuki
{"title":"Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs","authors":"Yongxun Liu, T. Matsukawa, K. Endo, M. Masahara, K. Ishii, S. O'Uchi, H. Yamauchi, J. Tsukada, Y. Ishikawa, E. Suzuki","doi":"10.1109/IEDM.2006.346953","DOIUrl":null,"url":null,"abstract":"We have successfully developed the advanced FinFET fabrication processes for materializing FinFET CMOS circuits. Using the developed technologies, we demonstrate the advanced TiN metal gate, fin-height controlled FinFET CMOS inverter with an excellent transfer performance, and the flexible threshold voltage, asymmetric gate insulator thickness four-terminal (4T) FinFET with a greatly improved subthreshold (S) slope, for the first time","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 32
Abstract
We have successfully developed the advanced FinFET fabrication processes for materializing FinFET CMOS circuits. Using the developed technologies, we demonstrate the advanced TiN metal gate, fin-height controlled FinFET CMOS inverter with an excellent transfer performance, and the flexible threshold voltage, asymmetric gate insulator thickness four-terminal (4T) FinFET with a greatly improved subthreshold (S) slope, for the first time
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