J. Appenzeller, T. Schapers, H. Hardtdegen, B. Lengeler, H. Luth
{"title":"Quantum transport in quasi one-dimensional In/sub 0.77/Ga/sub 0.23/As/InP rings","authors":"J. Appenzeller, T. Schapers, H. Hardtdegen, B. Lengeler, H. Luth","doi":"10.1109/ICIPRM.1994.328282","DOIUrl":null,"url":null,"abstract":"We have fabricated mesoscopic rings in a strained high mobility In/sub 0.77/Ga/sub 0.23/As/InP heterostructure where periodic oscillations in the magnetoresistance due to the Aharonov-Bohm effect can be observed, although the one-dimensional transport regime with only one mode in the ring was not yet obtained. The influence of temperature and electron excess energy on the phase coherence length were investigated and could be explained by the phase breaking influence of electron-electron scattering events. We have shown that InGaAs/InP with its low electron mass is ideally suited for devices based on electron interference.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have fabricated mesoscopic rings in a strained high mobility In/sub 0.77/Ga/sub 0.23/As/InP heterostructure where periodic oscillations in the magnetoresistance due to the Aharonov-Bohm effect can be observed, although the one-dimensional transport regime with only one mode in the ring was not yet obtained. The influence of temperature and electron excess energy on the phase coherence length were investigated and could be explained by the phase breaking influence of electron-electron scattering events. We have shown that InGaAs/InP with its low electron mass is ideally suited for devices based on electron interference.<>
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