Y. Yeoh, S. Suk, Ming Li, K. Yeo, Dong-Won Kim, G. Jin, Kyoungsuk Oh
{"title":"Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor","authors":"Y. Yeoh, S. Suk, Ming Li, K. Yeo, Dong-Won Kim, G. Jin, Kyoungsuk Oh","doi":"10.1109/IRPS.2009.5173286","DOIUrl":null,"url":null,"abstract":"Hot carrier (HC) reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2nm thickness show worse hot carrier reliability. The worst VD for 10 years guaranty, 1.31V, satisfies requirement of ITRS roadmap.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"os-3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Hot carrier (HC) reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2nm thickness show worse hot carrier reliability. The worst VD for 10 years guaranty, 1.31V, satisfies requirement of ITRS roadmap.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
