Selective area processing of InGaAsP

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328195

S. Pearton, C. Abernathy, F. Ren

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Abstract

The electrical activation characteristics of Si/sup +/ and Be/sup +/ ions implanted into InGaAsP (/spl lambda/=1-3 /spl mu/m) grown lattice-matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5/spl times/10/sup 12/-5/spl times/10/sup 14/ cm/sup -2/), annealing time (3-60 sec) and annealing temperature (575-750/spl deg/C). Maximum doping concentrations of /spl sim/2/spl times/10/sup 19/ cm/sup -3/ were obtained for both Si/sup +/ and Be/sup +/, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F/sup +/ or H/sup +/ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of /spl sim/8/spl times/10/sup 6/ /spl Omega/spl square/ or /spl sim/10/sup 6/ /spl Omega/spl square/ for initially p/sup +/ or n/sup +/InGaAsP, respectively, were obtained for F/sup +/ implants followed by annealing near 450/spl deg/C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH/sub 4H/sub 2Ar discharges at low DC biases. The etch rates are the same for both n/sup +/ and p/sup +/ quaternary layers and are independent of the doping level.<>

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InGaAsP的选择性区域处理

采用金属有机分子束外延法将Si/sup +/和Be/sup +/离子注入到与InP相匹配的InGaAsP (/spl λ /=1 ~ 3 /spl mu/m)中，研究了离子剂量(5/spl次/10/sup 12/-5/spl次/10/sup 14/ cm/sup -2/)、退火时间(3 ~ 60秒)和退火温度(575 ~ 750/spl℃)对电活化特性的影响。Si/sup +/和Be/sup +/的最大掺杂浓度为/spl sim/2/spl倍/10/sup 19/ cm/sup -3/，电活化活化能分别为0.58 eV和0.39 eV。多层能量的F/sup +/或H/sup +/植片可用于生产高电阻层，以达到隔离的目的——对于最初的p/sup +/或n/sup +/InGaAsP, F/sup +/植片在接近450/spl度/C退火后，获得的最大薄片电阻分别为/spl sim/8/spl倍/10/sup 6/ /spl Omega/spl square/或/spl sim/10/sup 6/ /spl Omega/spl square/。在低直流偏置条件下，采用电子回旋共振CH/sub 4H/sub 2Ar放电，获得了InGaAsP光滑的各向异性干刻蚀。n/sup +/和p/sup +/四层的腐蚀速率相同，且与掺杂水平无关。

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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