{"title":"Hetero-antisite defects in III-V materials","authors":"P. Omling","doi":"10.1109/SIM.1992.752672","DOIUrl":null,"url":null,"abstract":"The properties of hetero-antisite impurities in III-V semiconductors are, reviewed. The present understanding of the best known case, the Sb/sub Ga/ double-donor hetero-antisite defect in GaAs, is presented in detail, and the formation mechanisms, the spin resonance properties, the electronic structure, including our theoretical understanding of it, are described. Finally, a comparison with properties of the As/sub Ga/- related EL2 defect is made.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The properties of hetero-antisite impurities in III-V semiconductors are, reviewed. The present understanding of the best known case, the Sb/sub Ga/ double-donor hetero-antisite defect in GaAs, is presented in detail, and the formation mechanisms, the spin resonance properties, the electronic structure, including our theoretical understanding of it, are described. Finally, a comparison with properties of the As/sub Ga/- related EL2 defect is made.
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