T. Yamauchi, A. Kinoshita, Y. Tsuchiya, J. Koga, K. Kato
{"title":"1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance","authors":"T. Yamauchi, A. Kinoshita, Y. Tsuchiya, J. Koga, K. Kato","doi":"10.1109/IEDM.2006.346791","DOIUrl":null,"url":null,"abstract":"This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles generation at the nickel silicide (NiSi)/silicon (Si) interface, based on first-principles calculations. Dipole comforting SBH is dramatically reduced to 0.1 eV in 1 nm region around the interface for the case of B atoms substituted for Si atoms. The results suggest that NiSi with appropriate dopant preparation is a plausible electrode material for ultimately small p-MOSFETs","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346791","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles generation at the nickel silicide (NiSi)/silicon (Si) interface, based on first-principles calculations. Dipole comforting SBH is dramatically reduced to 0.1 eV in 1 nm region around the interface for the case of B atoms substituted for Si atoms. The results suggest that NiSi with appropriate dopant preparation is a plausible electrode material for ultimately small p-MOSFETs
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