M. Garcia Perez, T. Benyattou, A. Tabata, G. Guillot, M. Sacilotti, P. Abraham, Y. Monteil, J. Tardy
{"title":"Optical characterization of InAlAs/InP single and double heterostructures","authors":"M. Garcia Perez, T. Benyattou, A. Tabata, G. Guillot, M. Sacilotti, P. Abraham, Y. Monteil, J. Tardy","doi":"10.1109/ICIPRM.1993.380686","DOIUrl":null,"url":null,"abstract":"The authors report low temperature photoluminescence studies of single (InP/InAlAs) and double (InP/InAlAs/InP) heterostructures. The samples were grown by atmospheric pressure metal organic vapor phase epitaxy at 650/spl deg/C. On the single heterostructure, the well known emission was observed at 1.2 eV due to InAlAs on InP type II direct interface. On the double heterostructure, a new emission at 1.3 eV has been observed. The influence of the excitation power and the electric field was investigated on this transition. Optical measurement results are presented carried out on a bevelled sample. The results show that this emission is related to an interface recombination and that both interfaces are not equivalent.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The authors report low temperature photoluminescence studies of single (InP/InAlAs) and double (InP/InAlAs/InP) heterostructures. The samples were grown by atmospheric pressure metal organic vapor phase epitaxy at 650/spl deg/C. On the single heterostructure, the well known emission was observed at 1.2 eV due to InAlAs on InP type II direct interface. On the double heterostructure, a new emission at 1.3 eV has been observed. The influence of the excitation power and the electric field was investigated on this transition. Optical measurement results are presented carried out on a bevelled sample. The results show that this emission is related to an interface recombination and that both interfaces are not equivalent.<>
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