Kibong Moon, E. Cha, Jaesung Park, Sang-gyun Gi, Myonglae Chu, K. Baek, Byunggeun Lee, S. Oh, H. Hwang
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引用次数: 29
Abstract
We report novel nanoscale synapse and neuron devices for ultra-high density neuromorphic system. By adopting a Mo electrode, the redox reaction at Mo/Pr0.7Ca0.3MnO3 (PCMO) interface was controlled which in turn significantly improve synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Furthermore, The NbO2 based Insulator-Metal Transition (IMT) oscillator was developed for neuron application. Finally, we have experimentally confirmed the realization of pattern recognition with high accuracy using the 11k-bit Mo/PCMO synapse array and NbO2 oscillator neuron.
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