M. B. Sky, N. Sosa, T. Masuda, W. Kim, S. Kim, A. Ray, R. Bruce, J. Gonsalves, Y. Zhu, K. Suu, C. Lam
{"title":"Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory","authors":"M. B. Sky, N. Sosa, T. Masuda, W. Kim, S. Kim, A. Ray, R. Bruce, J. Gonsalves, Y. Zhu, K. Suu, C. Lam","doi":"10.1109/IEDM.2015.7409621","DOIUrl":null,"url":null,"abstract":"We show, for the first time, a robust high aspect ratio (~4:1) confined PCM cell which utilizes a dense and highly reliable nano-crystalline-as-deposited ALD phase change material. The 33nm diameter pore structures were filled utilizing an in-situ metal nitride liner plus nano-crystalline ALD Ge-Sb-Te material. The tuned process for depositing and integrating the phase change material brings the programming endurance to beyond 2.8×1011. We demonstrate a fast programming speed of 80ns with 10x switching and, with the aid of simulation, show a path for these elements to create a high density PCM cell suitable for Storage Class Memory.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
We show, for the first time, a robust high aspect ratio (~4:1) confined PCM cell which utilizes a dense and highly reliable nano-crystalline-as-deposited ALD phase change material. The 33nm diameter pore structures were filled utilizing an in-situ metal nitride liner plus nano-crystalline ALD Ge-Sb-Te material. The tuned process for depositing and integrating the phase change material brings the programming endurance to beyond 2.8×1011. We demonstrate a fast programming speed of 80ns with 10x switching and, with the aid of simulation, show a path for these elements to create a high density PCM cell suitable for Storage Class Memory.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
