V. Plaksin, V. Riaby, Ji Hoon Kim, C. Choi, Heon-Ju Lee
{"title":"Plasma-Chemical Processing of Silicon Substrates Using a Novel Arc Plasmatron","authors":"V. Plaksin, V. Riaby, Ji Hoon Kim, C. Choi, Heon-Ju Lee","doi":"10.1109/DEIV.2006.357361","DOIUrl":null,"url":null,"abstract":"A novel arc plasma source is proposed, which has low anode erosion rate allowing it to generate nearly spectrally clean plasma flow at the lifetime of 103~104 hours. The temperature of plasma near the nozzle exit is below 100 degC at arc power up to 2 kW. The design and characteristics of the plasmatron are discussed. Vacuum experiments with heterogeneous plasma-chemical processes showed that this device can serve as an effective tool for plasma-chemical treatment at pressures P~100 mbar. As an example, plasma-chemical etching processes for mono-crystal silicon in CF4 plasma and photo-resist on a silicon wafer in air, O2 and CF4 plasmas have been demonstrated","PeriodicalId":369861,"journal":{"name":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEIV.2006.357361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel arc plasma source is proposed, which has low anode erosion rate allowing it to generate nearly spectrally clean plasma flow at the lifetime of 103~104 hours. The temperature of plasma near the nozzle exit is below 100 degC at arc power up to 2 kW. The design and characteristics of the plasmatron are discussed. Vacuum experiments with heterogeneous plasma-chemical processes showed that this device can serve as an effective tool for plasma-chemical treatment at pressures P~100 mbar. As an example, plasma-chemical etching processes for mono-crystal silicon in CF4 plasma and photo-resist on a silicon wafer in air, O2 and CF4 plasmas have been demonstrated
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