{"title":"RF PE-CVD Characteristics for the Growth of Carbon Nanotubes in a CH4/N2 mixed gas","authors":"Y. Sung, T. Yuji, T. Sakoda","doi":"10.1109/DEIV.2006.357373","DOIUrl":null,"url":null,"abstract":"Characteristics of radio-frequency (RF) plasma-enhanced vapor deposition (PE-CVD) for the growth of carbon nanotubes (CNTs) in a CH 4/N2 mixed gas were investigated through characterization of the prepared CNTs and a numerical simulation. The preparation of the CNTs was performed by the single chamber plasma process where the catalyst sputter deposition using a capacitively coupled plasma (CCP) and the PE-CVD using an inductively coupled plasma were carried out in the same discharge chamber. The plasma chemistry which is useful for optimizing preparation conditions was evaluated using the numerical code which could calculate the temporal evolution of particle densities in the plasma. The results showed the usefulness of the single chamber process system. It was also found that CH4, HCN and C2H6 radicals mainly contributed to the growth of CNTs","PeriodicalId":369861,"journal":{"name":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEIV.2006.357373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Characteristics of radio-frequency (RF) plasma-enhanced vapor deposition (PE-CVD) for the growth of carbon nanotubes (CNTs) in a CH 4/N2 mixed gas were investigated through characterization of the prepared CNTs and a numerical simulation. The preparation of the CNTs was performed by the single chamber plasma process where the catalyst sputter deposition using a capacitively coupled plasma (CCP) and the PE-CVD using an inductively coupled plasma were carried out in the same discharge chamber. The plasma chemistry which is useful for optimizing preparation conditions was evaluated using the numerical code which could calculate the temporal evolution of particle densities in the plasma. The results showed the usefulness of the single chamber process system. It was also found that CH4, HCN and C2H6 radicals mainly contributed to the growth of CNTs