Jr R. Green, A. Lelis, D. Urciuoli, E. Schroen, D. Habersat
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Abstract
This work describes the dynamic nature of on-resistance in SiC MOSFETs, and explains how this happens whenever large threshold-voltage instabilities occur on the time scale of standard device operation, due to the presence of large numbers of active near-interfacial oxide traps—even in previously-unstressed, as-processed devices.
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