T. Ezaki, G. Suzuki, K. Konno, O. Matsushima, Y. Mizukane, D. Navarro, M. Miyake, N. Sadachika, H. Mattausch, M. Miura-Mattausch
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引用次数: 8
Abstract
The paper developed a photodiode (PD) model for circuit simulation considering, contrary to existing models, the transient carrier generation explicitly in the solution of the continuity equation. The developed model is compatible with conventional compact electrical device models and is demonstrated to enable accurate simulation of opto-electronic integrated circuits. The electric field distribution along the depth direction of the PD is found to cause a tail in the photo current, which has an adverse effect on optical response of PD and the performance of opto-electronic circuits. The developed opto-electronic circuit model is also applicable to predict how circuit performance is improved with respect to the improvement of photo diode characteristics
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