R. Hirano, T. Kanazawa, Y. Itoh, T. Itokawa, H. Onodera, M. Nakamura
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引用次数: 2
Abstract
The authors have developed a modified liquid encapsulated Czochralski method with a double thermal baffle, by which low etch pitch density (EPD) S-doped InP crystals with lower carrier concentration can be grown. The low EPD S-doped InP crystals became rectangular in shape. When the faceted surfaces were clearly seen on the body, the dislocation density decreased drastically. The solid-liquid interface shape of the crystal investigated by A-B etching, scanning photoluminescence and infrared macrograph was flatter than that of the conventional crystals. The facet growth of the {111} planes was observed on the body of the newly developed crystal.<>
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