Charge transfer phenomena in semi-insulating InP:Fe

G. Wittmann, R. Fasbender, M. Thoms, A. Winnacker
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引用次数: 1

Abstract

Charge transfer phenomena are studied in semi-insulating InP:Fe. It is shown that the Fe-absorption is changed under exposure to near IR-light due to pumping of charge carriers into traps other than Fe. This process may affect the determination of the Fe-distribution in InP:Fe by optical absorption. From the change in Fe-absorption the absolute concentration of traps can be estimated. The spectral dependence of the charge transfer process reveals that mainly electron traps are active above 80K.<>
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半绝缘InP:Fe中的电荷转移现象
研究了半绝缘InP:Fe中的电荷转移现象。结果表明,在近红外光照射下,铁的吸收发生了变化,这是由于将载流子泵入除铁以外的阱中。这一过程可能影响用光学吸收法测定InP:Fe中铁的分布。从铁吸收的变化可以估计出陷阱的绝对浓度。电荷转移过程的光谱依赖性表明,在80K以上,电子陷阱主要是活跃的。
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