Microscopic Characterization of Failure Mechanisms in Long-Term Implanted Microwire Neural Electrodes

Z.J. Zhang, Q. Li, Z. Dong, W.T. Wang, S. T. Lai, X. Yang, F. Liang, C.L. Wang, Changzhi Luo, L. Lyu, Z. Li, J.M. Xu, X. Wu
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Abstract

The development of integrated circuits greatly enhances brain-computer interface technology. The degradation of the implanted neural electrodes is a key issue. The scanning electron microscope and energy dispersive spectrometer techniques are used to characterize the evolution of the microscopic morphology and element migration of implanted microwire electrodes containing 32 channels together with the recorded neural signals at different implantation times. The spike amplitude decreases over time of implantation, leading to poorer identification of neural signals. The effect of degradation on the local field potential detection is neglectable. This work could guide the reliability improvement of the neural electrodes.
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长期植入的微丝神经电极失效机制的微观表征
集成电路的发展极大地促进了脑机接口技术的发展。植入神经电极的降解是一个关键问题。利用扫描电镜和能量色散谱技术,对植入32通道微丝电极的微观形貌和元素迁移的演变进行了表征,并记录了不同植入时间的神经信号。随着植入时间的延长,尖峰振幅减小,导致神经信号的识别能力下降。退化对局部场电位检测的影响可以忽略不计。这项工作对提高神经电极的可靠性具有指导意义。
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