P. Rojo-Romeo, P. Viktorovitch, J. Leclercq, X. Letartre, J. Tardy, M. Oustric, M. Gendry
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引用次数: 4
Abstract
In this work, we present a study of various low-frequency noise (LFN) sources in InAlAs/InGaAs MODFET structures. The contributions of the main noise sources-drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise-are separated by measuring the drain current power noise spectrum on uncompleted, gate free MODFET structures of different channel lengths. A variety of MBE grown structures was investigated: /spl delta/- and uniformly-doped MODFET's: devices with lattice-matched and strained channel. Also experiments were performed on devices with different source and drain ohmic contacts.<>
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