{"title":"Implant isolation and dry etching of InN","authors":"C. Abernathy, F. Ren, S. Pearton","doi":"10.1109/ICIPRM.1994.328251","DOIUrl":null,"url":null,"abstract":"Smooth, anisotropic dry etching of InN layers is demonstrated in low pressure (1-30 Torr) CH/sub 4H/sub 2/, Cl/sub 2H/sub 2/ or CCl/sub 2/F/sub 2Ar Electron Cyclotron Resonance discharges with additional dc biasing of the sample. Increasing the applied microwave power produces significant enhancements in etch rate. The presence of H/sub 2/ or F/sub 2/ in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies. F/sup +/ implantation at doses of /spl sim/10/sup 15/ cm/sup -2/ produces sheet resistances >5/spl times/10/sup 3/ /spl Omega/spl square/ in initially degenerately n/sup +/(4/spl times/10/sup 20/ cm/sup -3/) InN, and values >10/sup 6/ /spl Omega/spl square/ in lower-doped (/spl les/3/spl times/10/sup 19/ cm/sup -3/) ternary alloys InGaN and InAlN.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328251","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Smooth, anisotropic dry etching of InN layers is demonstrated in low pressure (1-30 Torr) CH/sub 4H/sub 2/, Cl/sub 2H/sub 2/ or CCl/sub 2/F/sub 2Ar Electron Cyclotron Resonance discharges with additional dc biasing of the sample. Increasing the applied microwave power produces significant enhancements in etch rate. The presence of H/sub 2/ or F/sub 2/ in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies. F/sup +/ implantation at doses of /spl sim/10/sup 15/ cm/sup -2/ produces sheet resistances >5/spl times/10/sup 3/ /spl Omega/spl square/ in initially degenerately n/sup +/(4/spl times/10/sup 20/ cm/sup -3/) InN, and values >10/sup 6/ /spl Omega/spl square/ in lower-doped (/spl les/3/spl times/10/sup 19/ cm/sup -3/) ternary alloys InGaN and InAlN.<>
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