{"title":"Properties of InP grown by migration-enhanced epitaxy using polycrystalline InP as phosphorus source","authors":"B.X. Yang, H. Hasegawa","doi":"10.1109/ICIPRM.1993.380658","DOIUrl":null,"url":null,"abstract":"The authors discuss the crystalline quality and electrical properties of InP grown by the migration-enhanced epitaxy (MEE) mode (Y. Horikoshi et al., 1986). InP layers were characterized by reflection high-energy electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, photoluminescence, and Hall measurements. Electrical properties which are strongly dependent on growth temperature are explained in terms of the impurity conduction through the residual stoichiometry-related donor defects. A conventional molecular beam epitaxy (MBE) growth was also made for comparison.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"153 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The authors discuss the crystalline quality and electrical properties of InP grown by the migration-enhanced epitaxy (MEE) mode (Y. Horikoshi et al., 1986). InP layers were characterized by reflection high-energy electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, photoluminescence, and Hall measurements. Electrical properties which are strongly dependent on growth temperature are explained in terms of the impurity conduction through the residual stoichiometry-related donor defects. A conventional molecular beam epitaxy (MBE) growth was also made for comparison.<>
作者讨论了通过迁移增强外延(MEE)模式生长的InP的晶体质量和电学性能(Y. Horikoshi et al.， 1986)。采用反射高能电子衍射、x射线衍射、x射线光电子能谱、俄歇电子能谱、光致发光和霍尔测量对InP层进行了表征。电学性质是强烈依赖于生长温度解释的杂质通过残余化学计量相关的供体缺陷传导。为了进行比较，还进行了常规分子束外延(MBE)生长。
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