{"title":"High performance InGaAs/InP JFETs with step-doped channel doping for OEIC receivers","authors":"M. Blaser, R. Bauknecht, H. Melchior","doi":"10.1109/ICIPRM.1993.380654","DOIUrl":null,"url":null,"abstract":"The structure of InGaAs/InP junction field effect transistors with step-doped channel profiles for optoelectronic integrated circuit (OEIC) receiver applications is described. Transistors with a gate length of 3 microns have transconductances of 140 mS/mm, transit frequencies of 11.6 GHz and gate leakage currents around 1 /spl mu/A/mm. An excess noise factor of 1.5 was measured for transistors operated in optoelectronic integrated receivers.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The structure of InGaAs/InP junction field effect transistors with step-doped channel profiles for optoelectronic integrated circuit (OEIC) receiver applications is described. Transistors with a gate length of 3 microns have transconductances of 140 mS/mm, transit frequencies of 11.6 GHz and gate leakage currents around 1 /spl mu/A/mm. An excess noise factor of 1.5 was measured for transistors operated in optoelectronic integrated receivers.<>
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