C. Tran, R. Masut, J. Brebner, M. Jouanne, R. Leonelli
{"title":"Atomic layer epitaxy of InP and InAs/InP heterostructures","authors":"C. Tran, R. Masut, J. Brebner, M. Jouanne, R. Leonelli","doi":"10.1109/ICIPRM.1993.380697","DOIUrl":null,"url":null,"abstract":"The samples used for this study were InAs/InP strained single quantum wells and strained superlattices (SLS) grown by atomic layer epitaxy (ALE). The growth of InAs on InP is strongly influenced by the large lattice mismatch (3.22%). High resolution X-ray diffraction (HRXRD) was carried out. HRXRD can be used to quickly and precisely evaluate the ALE self-limiting growth rate of both InP and InAs. Using interference of X-ray wave fields in a ALE grown InP with an InAs marker layer the authors have accurately determined the growth per cycle. Raman spectra of AL grown InAs/InP SLSs show clearly the longitudinal acoustical folded modes and the longitudinal optic confined modes for both InAs and InP layers. The results indicate that despite the 3.2% lattice mismatch, ALE is a powerful method for fabricating highly strained InAs/InP structures with atomically controlled heterointerfaces.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The samples used for this study were InAs/InP strained single quantum wells and strained superlattices (SLS) grown by atomic layer epitaxy (ALE). The growth of InAs on InP is strongly influenced by the large lattice mismatch (3.22%). High resolution X-ray diffraction (HRXRD) was carried out. HRXRD can be used to quickly and precisely evaluate the ALE self-limiting growth rate of both InP and InAs. Using interference of X-ray wave fields in a ALE grown InP with an InAs marker layer the authors have accurately determined the growth per cycle. Raman spectra of AL grown InAs/InP SLSs show clearly the longitudinal acoustical folded modes and the longitudinal optic confined modes for both InAs and InP layers. The results indicate that despite the 3.2% lattice mismatch, ALE is a powerful method for fabricating highly strained InAs/InP structures with atomically controlled heterointerfaces.<>
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