K. Yeo, S. Suk, Ming Li, Y. Yeoh, K. Cho, Ki-Ha Hong, Seon-Pil Yun, Mong Sup Lee, N. Cho, Kwan-heum Lee, D. Hwang, Bokkyoung Park, Dong-Won Kim, Donggun Park, B. Ryu
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引用次数: 181
Abstract
GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/mum while n-TSNWFET shows on-current of 1.44 mA/mum. Merits of TSNWFET and performance enhancement of p-TSNWFET are explored using 3D and quantum simulation
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