I. Maximov, A. Gustafsson, H. Hansson, L. Samuelson, W. Seifert, A. Wiedensohler
{"title":"Aerosol deposition and combined dry/wet etching techniques for fabrication of InP-based quantum dot structures","authors":"I. Maximov, A. Gustafsson, H. Hansson, L. Samuelson, W. Seifert, A. Wiedensohler","doi":"10.1109/ICIPRM.1993.380541","DOIUrl":null,"url":null,"abstract":"The authors present a novel technology for the fabrication of quantum dots (QDs) structures based on the deposition of ultrafine aerosol Ag particles onto the surface of Ga/sub 0.47/In/sub 0.53/As/InP quantum well structures grown by metal organic vapor phase epitaxy. The quantum well structures consisted of 3 quantum wells (QWs) with nominal thickness of 3, 8 and 18 monolayers with the thinnest QW being on top of the structure. A reference layer of Ga/sub 0.47/In/sub 0.53/As was grown below QWs for lattice matching control. The QWs were separated by 15 nm barriers of InP and the cladding layer was about 66 nm in thickness. Silver particles 40 nm in diameter were used as an etching mask. QW thickness dependence of quenching of QD luminescence was observed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The authors present a novel technology for the fabrication of quantum dots (QDs) structures based on the deposition of ultrafine aerosol Ag particles onto the surface of Ga/sub 0.47/In/sub 0.53/As/InP quantum well structures grown by metal organic vapor phase epitaxy. The quantum well structures consisted of 3 quantum wells (QWs) with nominal thickness of 3, 8 and 18 monolayers with the thinnest QW being on top of the structure. A reference layer of Ga/sub 0.47/In/sub 0.53/As was grown below QWs for lattice matching control. The QWs were separated by 15 nm barriers of InP and the cladding layer was about 66 nm in thickness. Silver particles 40 nm in diameter were used as an etching mask. QW thickness dependence of quenching of QD luminescence was observed.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
