{"title":"A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters","authors":"M. Pourfath, H. Kosina, S. Selberherr","doi":"10.1109/IEDM.2006.346739","DOIUrl":null,"url":null,"abstract":"The performance of carbon nanotube field-effect transistors has been studied based on the non-equilibrium Green's function formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed. The effect of scaling of the source-gate spacer, drain-gate spacer, and gate length is studied. The results for devices with different barrier heights at the metal-CNT interface are discussed","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The performance of carbon nanotube field-effect transistors has been studied based on the non-equilibrium Green's function formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed. The effect of scaling of the source-gate spacer, drain-gate spacer, and gate length is studied. The results for devices with different barrier heights at the metal-CNT interface are discussed
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