A. Feygenson, R. Montgomery, P.R. Smith, R. Hamm, M. Haner, R.D. Yadvish, M. Panish, H. Temkin, D. Ritter
{"title":"InP/GaInAs composite collector heterostructure bipolar transistors and circuits","authors":"A. Feygenson, R. Montgomery, P.R. Smith, R. Hamm, M. Haner, R.D. Yadvish, M. Panish, H. Temkin, D. Ritter","doi":"10.1109/ICIPRM.1993.380556","DOIUrl":null,"url":null,"abstract":"The authors investigate an alternative structure of a InP/GaInAs composite collector heterostructure bipolar transistor (CC HBT) which relied on a thin lightly doped quaternary layer of GaInAsP placed between GaInAs and InP regions of the collector instead of the doped interface. In this structure the accurate doping control of GaInAsP layer was not required. The resulting transistor showed high gain, high breakdown voltage BV/sub CEO/, f/sub T/ of 137 GHz and improved scalability characteristics. The usefulness of high speed CC HBTs for circuits was demonstrated by 28 GHz bandwidth, 39 db/spl Omega/ gain monolithic transimpedance amplifiers and 32 Gbit/s hybrid optical receivers.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The authors investigate an alternative structure of a InP/GaInAs composite collector heterostructure bipolar transistor (CC HBT) which relied on a thin lightly doped quaternary layer of GaInAsP placed between GaInAs and InP regions of the collector instead of the doped interface. In this structure the accurate doping control of GaInAsP layer was not required. The resulting transistor showed high gain, high breakdown voltage BV/sub CEO/, f/sub T/ of 137 GHz and improved scalability characteristics. The usefulness of high speed CC HBTs for circuits was demonstrated by 28 GHz bandwidth, 39 db/spl Omega/ gain monolithic transimpedance amplifiers and 32 Gbit/s hybrid optical receivers.<>
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