S. Pae, H. Sagong, C. Liu, M. Jin, Y. H. Kim, S. Choo, J. J. Kim, H. J. Kim, S. Yoon, H. Nam, H. Shim, S. M. Park, J. Park, S. Shin, J. Park
{"title":"Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations","authors":"S. Pae, H. Sagong, C. Liu, M. Jin, Y. H. Kim, S. Choo, J. J. Kim, H. J. Kim, S. Yoon, H. Nam, H. Shim, S. M. Park, J. Park, S. Shin, J. Park","doi":"10.1109/IEDM.2015.7409744","DOIUrl":null,"url":null,"abstract":"We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product design and qualifications. We show that along with increased AFs and optimized product HTOL stress conditions, 5-10x more efficiency in time has been achieved. In addition, external mechanical strain on Fin reliability will be discussed.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product design and qualifications. We show that along with increased AFs and optimized product HTOL stress conditions, 5-10x more efficiency in time has been achieved. In addition, external mechanical strain on Fin reliability will be discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
