G. Steinlesberger, G. Schindler, M. Engelhardt, W. Steinhogl, M. Traving
{"title":"Aluminum nano interconnects","authors":"G. Steinlesberger, G. Schindler, M. Engelhardt, W. Steinhogl, M. Traving","doi":"10.1109/IITC.2004.1345681","DOIUrl":null,"url":null,"abstract":"The physical and technological limitations for aluminium interconnect technology in the deep sub-100 nm regime are investigated. Using a wet chemical process for hard mask trimming the fabrication of nano Al interconnects has been demonstrated. Based on first electrical measurements the electrical size effect of Al interconnects with critical dimensions far below 100 nm as well as the impact of side wall roughness are discussed.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
The physical and technological limitations for aluminium interconnect technology in the deep sub-100 nm regime are investigated. Using a wet chemical process for hard mask trimming the fabrication of nano Al interconnects has been demonstrated. Based on first electrical measurements the electrical size effect of Al interconnects with critical dimensions far below 100 nm as well as the impact of side wall roughness are discussed.
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