A substrate-independent wafer transfer technique for surface-micromachined devices

H. Nguyen, P. Patterson, H. Toshiyoshi, M. Wu
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引用次数: 20

Abstract

We report on a new wafer transfer technique that can remove and transfer surface-micromachined layers to application-specific substrates. This process, however, is not limited to only MEMS devices and can be applicable to other semiconductor devices. Successful transfer of a 1 cm/spl times/1 cm MEMS chip with electrostatically actuated curled cantilever switches to a transparent quartz substrate has been demonstrated. Pull-in voltage for transferred devices is 31 V compared with 23 V for devices on standard silicon substrates.
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用于表面微加工器件的非基板晶圆转移技术
我们报告了一种新的晶圆转移技术,可以去除和转移表面微加工层到应用特定的基板上。然而,该工艺不仅限于MEMS器件,还可以适用于其他半导体器件。成功地转移了1 cm/spl倍/1 cm MEMS芯片与静电驱动卷曲悬臂开关到透明石英衬底已经证明。转移器件的拉入电压为31 V,而标准硅衬底上的器件为23 V。
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