{"title":"A review of radiation effects in InP solar cells","authors":"R. Walters","doi":"10.1109/ICIPRM.1994.328220","DOIUrl":null,"url":null,"abstract":"Theoretically, InP has one of the highest solar energy conversion efficiencies of any semiconductor material. However, InP wafers are brittle and expensive which makes large area, single crystal InP device fabrication difficult. Despite this difficulty, research in InP solar cells has progressed rapidly over the past 10 years. The reason is high radiation tolerance. This quality is an essential feature of space power sources due to the harsh space radiation environment, and InP solar cells are more radiation resistant than the leading solar cell technologies, i.e. Si and GaAs. Therefore, InP solar cells are a very attractive space power source and have been seriously developed as such. This paper first reviews the chronology of this development and then takes a focused look at the present understanding of the mechanism of the radiation response of InP solar cells.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

Theoretically, InP has one of the highest solar energy conversion efficiencies of any semiconductor material. However, InP wafers are brittle and expensive which makes large area, single crystal InP device fabrication difficult. Despite this difficulty, research in InP solar cells has progressed rapidly over the past 10 years. The reason is high radiation tolerance. This quality is an essential feature of space power sources due to the harsh space radiation environment, and InP solar cells are more radiation resistant than the leading solar cell technologies, i.e. Si and GaAs. Therefore, InP solar cells are a very attractive space power source and have been seriously developed as such. This paper first reviews the chronology of this development and then takes a focused look at the present understanding of the mechanism of the radiation response of InP solar cells.<>
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InP太阳能电池辐射效应研究进展
理论上,InP是所有半导体材料中太阳能转换效率最高的材料之一。然而,InP晶圆易碎且价格昂贵,这使得制造大面积单晶InP器件变得困难。尽管存在这些困难,但在过去的10年里,InP太阳能电池的研究取得了迅速的进展。原因是高辐射耐受性。由于恶劣的空间辐射环境,这种质量是空间电源的基本特征,而InP太阳能电池比领先的太阳能电池技术(即Si和GaAs)更具抗辐射性。因此,InP太阳能电池是一种非常有吸引力的空间电源,并得到了认真的发展。本文首先回顾了这一发展的年代,然后重点介绍了目前对InP太阳能电池辐射响应机制的理解
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Comparisons between conventional LEC, VCZ and VGF for the growth of InP crystals Reliability of InP-based HBT's and HEMT's: experiments, failure mechanisms, and statistics Bulk InP technologies: InP against GaAs Improvement of InAlAs/InP heterointerface grown by MOVPE by using thin AlP layer Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds
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