Xinyi Xu, Hongchao Zhang, Chuanpeng Jiang, Jinhao Li, Shi-Ji Lu, Yunpeng Li, H. Du, Xueying Zhang, Zhaohao Wang, K. Cao, Weisheng Zhao, Shuqin Lyu, Hao Xu, Bonian Jiang, Le Wang, Bowen Man, Cong Zhang, Dandan Li, Shuhui Li, Xiaofei Fan, Gefei Wang, Hong-xi Liu
{"title":"Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays","authors":"Xinyi Xu, Hongchao Zhang, Chuanpeng Jiang, Jinhao Li, Shi-Ji Lu, Yunpeng Li, H. Du, Xueying Zhang, Zhaohao Wang, K. Cao, Weisheng Zhao, Shuqin Lyu, Hao Xu, Bonian Jiang, Le Wang, Bowen Man, Cong Zhang, Dandan Li, Shuhui Li, Xiaofei Fan, Gefei Wang, Hong-xi Liu","doi":"10.1109/IRPS48203.2023.10117643","DOIUrl":null,"url":null,"abstract":"We have systematically investigated the reliability performance of spin-orbit torque (SOT) magnetic random access memory (MRAM) devices, including electromigration (EM), stress migration (SM), endurance and data retention. The results show that the SOT-MRAM devices pass the EM requirement over 10 years lifetime under the operation condition, and pass the SM requirement over 1000 hours baking at 175°C. Moreover, high endurance close to 1014 cycles and robust data retention over 10 years storage time were demonstrated for the same SOT-MRAM devices. This full characterization fills the blank of SOT-MRAM reliability research and would contribute to the commercialization of the SOT-MRAM.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10117643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have systematically investigated the reliability performance of spin-orbit torque (SOT) magnetic random access memory (MRAM) devices, including electromigration (EM), stress migration (SM), endurance and data retention. The results show that the SOT-MRAM devices pass the EM requirement over 10 years lifetime under the operation condition, and pass the SM requirement over 1000 hours baking at 175°C. Moreover, high endurance close to 1014 cycles and robust data retention over 10 years storage time were demonstrated for the same SOT-MRAM devices. This full characterization fills the blank of SOT-MRAM reliability research and would contribute to the commercialization of the SOT-MRAM.
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