Performance Boost using a New Device Design Methodology Based on Characteristic Current for Low-Power CMOS

E. Yoshida, Y. Momiyama, M. Miyamoto, T. Saiki, M. Kojima, S. Satoh, T. Sugii
{"title":"Performance Boost using a New Device Design Methodology Based on Characteristic Current for Low-Power CMOS","authors":"E. Yoshida, Y. Momiyama, M. Miyamoto, T. Saiki, M. Kojima, S. Satoh, T. Sugii","doi":"10.1109/IEDM.2006.346995","DOIUrl":null,"url":null,"abstract":"The authors proposes a characteristic current (I_chr) to replace the conventional saturation drive current used to estimate approximate CMOS inverter delay times for deeply scaled devices. The authors also present a new device design method based on I_chr to achieve a higher operation frequency for CMOS inverter circuits. The new method shortens propagation delay time (Tpd) by 15%","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"194 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

The authors proposes a characteristic current (I_chr) to replace the conventional saturation drive current used to estimate approximate CMOS inverter delay times for deeply scaled devices. The authors also present a new device design method based on I_chr to achieve a higher operation frequency for CMOS inverter circuits. The new method shortens propagation delay time (Tpd) by 15%
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于特性电流的低功耗CMOS器件设计新方法的性能提升
作者提出了一种特征电流(I_chr)来取代传统的饱和驱动电流,用于估计深度缩放器件的CMOS逆变器延迟时间。作者还提出了一种新的基于I_chr的器件设计方法,以实现CMOS逆变电路更高的工作频率。新方法将传输延迟时间(Tpd)缩短了15%
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Plenary Session High Density 3-D Integration Technology for Massively Parallel Signal Processing in Advanced Infrared Focal Plane Array Sensors 1.5 μm Emission from a Silicon MOS-LED Based on a Dislocation Network 1T MEMS Memory Based on Suspended Gate MOSFET Ultra High-speed Novel Bulk Thyristor-SRAM (BT-RAM) Cell with Selective Epitaxy Anode (SEA)
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1