L. Thomas, G. Jan, S. Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, S. Serrano-Guisan, R. Tong, K. Pi, D. Shen, R. He, J. Haq, Z. Teng, R. Annapragada, V. Lam, Yu-Jen Wang, T. Zhong, T. Torng, P. Wang
{"title":"Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM","authors":"L. Thomas, G. Jan, S. Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, S. Serrano-Guisan, R. Tong, K. Pi, D. Shen, R. He, J. Haq, Z. Teng, R. Annapragada, V. Lam, Yu-Jen Wang, T. Zhong, T. Torng, P. Wang","doi":"10.1109/IEDM.2015.7409773","DOIUrl":null,"url":null,"abstract":"Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ~30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ~30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30
Abstract
Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ~30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ~30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.