Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

L. Thomas, G. Jan, S. Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, S. Serrano-Guisan, R. Tong, K. Pi, D. Shen, R. He, J. Haq, Z. Teng, R. Annapragada, V. Lam, Yu-Jen Wang, T. Zhong, T. Torng, P. Wang
{"title":"Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM","authors":"L. Thomas, G. Jan, S. Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, S. Serrano-Guisan, R. Tong, K. Pi, D. Shen, R. He, J. Haq, Z. Teng, R. Annapragada, V. Lam, Yu-Jen Wang, T. Zhong, T. Torng, P. Wang","doi":"10.1109/IEDM.2015.7409773","DOIUrl":null,"url":null,"abstract":"Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ~30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ~30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30

Abstract

Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ~30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ~30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
解决垂直STT-MRAM器件级和芯片级热稳定性尺寸依赖关系不一致的矛盾
目前基于器件级数据对垂直STT-MRAM热稳定性的理解表明,热稳定性因子A几乎与~30nm以上的器件直径无关。在这里,我们报告了与传统观点相反的是,芯片级数据保留在直径在55到100纳米之间表现出实质性的尺寸依赖性。我们表明,广泛用于测量A的方法对于大于~30 nm的器件是不准确的,导致对尺寸依赖性的严重低估。我们推导了一个改进的模型,使我们能够协调在器件和芯片水平上测量的A的尺寸依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM Robust and compact key generator using physically unclonable function based on logic-transistor-compatible poly-crystalline-Si channel FinFET technology High performance dual-gate ISFET with non-ideal effect reduction schemes in a SOI-CMOS bioelectrical SoC Physics-based compact modeling framework for state-of-the-art and emerging STT-MRAM technology
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1