Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions

Abstract

The avalanche breakdown behavior of InGa(Al)P has been investigated by growing a series of pin diode structures covering the material range from InGaP to InAlP. The results show that reverse leakage currents are very low in this material system in keeping with the large band-gap until the onset of avalanche breakdown. Comparing the breakdown voltage (Vbd) with that of GaAs, we find that significant increases are obtained, with InAlP having in excess of twice the Vbd of GaAs. Comparisons with AlGaAs structures of similar band-gap shows that the InGa(Al)P system still has a larger Vbd, suggesting that it may be better for power applications.<>