{"title":"MOSFET scalability limits and \"new frontier\" devices","authors":"D. Antoniadis","doi":"10.1109/VLSIT.2002.1015365","DOIUrl":null,"url":null,"abstract":"Silicon-based MOSFETs are scalable to gate-lengths around 10 nm but will fall well short of commensurate performance enhancement. High mobility materials and device structures that eliminate the use of doping for electrostatic control will have to be incorporated in future CMOS technologies, along with very low contact resistance processes. New frontier FETs incorporating entirely new transport principles show promise but are still far from practical implementation.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
Silicon-based MOSFETs are scalable to gate-lengths around 10 nm but will fall well short of commensurate performance enhancement. High mobility materials and device structures that eliminate the use of doping for electrostatic control will have to be incorporated in future CMOS technologies, along with very low contact resistance processes. New frontier FETs incorporating entirely new transport principles show promise but are still far from practical implementation.
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