Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept

H. B. Variar, S. K. Gautam, Ashita Kumar, K. M. Amogh, Juan Luo, Ning Shi, D. Marreiro, S. Mallikarjunaswamy, M. Shrivastava
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Abstract

This work demonstrates an SCR-Diode series ESD Protection concept, which can be engineered to provide a custom TLP I-V characteristic. SCRs and diodes with dimensional variations have been used in different combinations and width ratios, which results in a range of TLP I-V characteristics. This protection circuit comes with several advantages as adaptability for various ESD protection windows, the benefits of using SCR as a protection device and the ease of designing the circuit. Along with TCAD studies, experimental data demonstrates that N-well and P-well doping of SCR can be used to further tune the Vhold and Ron of the protection circuit.
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工程定制TLP I-V特性,采用可控硅二极管系列ESD保护概念
这项工作展示了一个可控硅二极管系列ESD保护概念,它可以设计为提供定制的TLP I-V特性。尺寸变化的晶闸管和二极管以不同的组合和宽度比使用,从而产生一系列的TLP I-V特性。这种保护电路具有几个优点,如适应各种ESD保护窗口,使用可控硅作为保护器件的好处,以及易于设计电路。结合TCAD的研究,实验数据表明,利用可控硅的n阱和p阱掺杂可以进一步调谐保护电路的Vhold和Ron。
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