{"title":"Thermal stability of pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/As/InP heterostructures","authors":"B. R. Bennett, J. D. del Alamo","doi":"10.1109/ICIPRM.1993.380585","DOIUrl":null,"url":null,"abstract":"The authors investigated the thermal stability of strained layers of InGaAs and InAlAs on InP. Epilayer and interface quality was assessed by high-resolution X-ray diffraction and electron mobility measurement as a function of the annealing cycle. Both techniques show that high-quality, pseudomorphic heterostructures are thermally stable at annealing temperatures of up to 700-800/spl deg/C, despite exceeding the Matthews-Blakeslee critical layer thickness. These findings suggest that layers exceeding the predicted critical thickness may be successfully used in device heterostructures.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The authors investigated the thermal stability of strained layers of InGaAs and InAlAs on InP. Epilayer and interface quality was assessed by high-resolution X-ray diffraction and electron mobility measurement as a function of the annealing cycle. Both techniques show that high-quality, pseudomorphic heterostructures are thermally stable at annealing temperatures of up to 700-800/spl deg/C, despite exceeding the Matthews-Blakeslee critical layer thickness. These findings suggest that layers exceeding the predicted critical thickness may be successfully used in device heterostructures.<>
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