Spatial distribution of charge carrier temperature and lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy

S. Waldmuller, M. Lang, P. Wellmann, A. Winnacker
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引用次数: 2

Abstract

The authors determine the minority carrier lifetime (/spl tau/) in semi-insulating InP in an indirect way by analyzing the high energy tail of the photoluminescence spectrum and extracting a charge carrier temperature T/sub e/ from this data. T/sub e/ turns out to be directly related to /spl tau/, being small for large /spl tau/ and vice versa. It is shown that a) variations of the electron temperature can be observed in typical sample of LEC-grown InP:Fe, b) these variations can be analyzed in terms of charge carrier lifetimes, c) these temperature (and lifetime) variations can be correlated with the PL-intensity distribution and the Fe-distribution in the material.<>
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半绝缘InP:Fe中载流子温度和寿命的空间分布
作者通过分析光致发光光谱的高能尾,提取载流子温度T/sub /,间接确定了半绝缘InP的少数载流子寿命(/spl tau/)。T/ e/与/spl /直接相关,小/spl /大,反之亦然。结果表明:a)在典型的lec生长InP:Fe样品中可以观察到电子温度的变化,b)这些变化可以从载流子寿命的角度进行分析,c)这些温度(和寿命)变化可以与材料中的pl强度分布和Fe分布相关。
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Comparisons between conventional LEC, VCZ and VGF for the growth of InP crystals Reliability of InP-based HBT's and HEMT's: experiments, failure mechanisms, and statistics Bulk InP technologies: InP against GaAs Improvement of InAlAs/InP heterointerface grown by MOVPE by using thin AlP layer Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds
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