Z. Wang, Y. Dai, C. Li, H. P. Lu, Z. Deng, S. Wan, S. Xu, M.F. Shun, H. Shun, L.Y. Lin
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引用次数: 0
Abstract
LEC undoped SI-GaAs materials obtained from different sources have been systematically investigated by using various techniques such as Hall effect measurements, IR absorption and Photoluminescence Mapping etc.. A strong dependence of electron mobility on spatial distribution of impurities and defects across the wafers revealed by spatially resolved photoluminescence at R.T. are observed. Spam-charge region scattering resulted from nominiformity is induced in theoretically calculating the electron mobility. A semi-empirical formula is presented by least-square fitting the mobility data obtained from temperature dependent Hall measurements. Additionally, the density and the scattering cross section of space-charge region and ionized impurity concentration were obtained.
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