New perspectives of dielectric breakdown in low-k interconnects

K. Yiang, H. Yao, A. Marathe, O. Aubel
{"title":"New perspectives of dielectric breakdown in low-k interconnects","authors":"K. Yiang, H. Yao, A. Marathe, O. Aubel","doi":"10.1109/IRPS.2009.5173299","DOIUrl":null,"url":null,"abstract":"An alternative method of analyzing time-dependent dielectric breakdown (TDDB) data for low-k dielectrics is presented. The analysis shows that time to breakdown is well correlated to the Poole-Frenkel emission equation, and therefore the √E-model is a more accurate model in describing the TDDB physics for low-k BEOL dielectrics.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"181 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

An alternative method of analyzing time-dependent dielectric breakdown (TDDB) data for low-k dielectrics is presented. The analysis shows that time to breakdown is well correlated to the Poole-Frenkel emission equation, and therefore the √E-model is a more accurate model in describing the TDDB physics for low-k BEOL dielectrics.
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低k互连中介电击穿的新观点
提出了一种分析低k介电材料时介电击穿(TDDB)数据的替代方法。分析表明,击穿时间与Poole-Frenkel发射方程有很好的相关性,因此√e模型是描述低k BEOL介质的TDDB物理的更准确的模型。
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