High performance passive devices for millimeter wave system integration on integrated fan-out (InFO) wafer level packaging technology

C. Tsai, J. Hsieh, Wei-Heng Lin, L. Yen, J. Hung, T. Peng, Hsi-Ching Wang, Cheng-Yu Kuo, I.L. Huang, W. Chu, Yi-Yang Lei, C. H. Yu, L. Sheu, C. Hsieh, C. S. Liu, K. Yee, Chuei-Tang Wang, Doug C. H. Yu
{"title":"High performance passive devices for millimeter wave system integration on integrated fan-out (InFO) wafer level packaging technology","authors":"C. Tsai, J. Hsieh, Wei-Heng Lin, L. Yen, J. Hung, T. Peng, Hsi-Ching Wang, Cheng-Yu Kuo, I.L. Huang, W. Chu, Yi-Yang Lei, C. H. Yu, L. Sheu, C. Hsieh, C. S. Liu, K. Yee, Chuei-Tang Wang, Doug C. H. Yu","doi":"10.1109/IEDM.2015.7409763","DOIUrl":null,"url":null,"abstract":"High performance passive devices for millimeter wave (MMW) system, including inductor, ring resonator, power combiner, coupler, balun, transmission line, and antenna, are first realized using integrated fan-out (InFO) wafer level packaging technology. The inductors has quality factor over 40; the power combiner, coupler, and balun show lower transmission loss than on-chip passives; antenna has the efficiency of over 60%. These devices on InFO enable low noise and power MMW system for mobile communication and IoT applications.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409763","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

High performance passive devices for millimeter wave (MMW) system, including inductor, ring resonator, power combiner, coupler, balun, transmission line, and antenna, are first realized using integrated fan-out (InFO) wafer level packaging technology. The inductors has quality factor over 40; the power combiner, coupler, and balun show lower transmission loss than on-chip passives; antenna has the efficiency of over 60%. These devices on InFO enable low noise and power MMW system for mobile communication and IoT applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于集成扇出(InFO)晶圆级封装技术的毫米波系统集成的高性能无源器件
毫米波(MMW)系统的高性能无源器件,包括电感器、环形谐振器、功率合成器、耦合器、平衡器、传输线和天线,首次采用集成的扇形输出(InFO)晶圆级封装技术实现。电感品质因数大于40;功率合成器、耦合器和平衡器比片上无源具有更低的传输损耗;天线效率达60%以上。InFO上的这些设备为移动通信和物联网应用提供了低噪声和功耗的毫米波系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM Robust and compact key generator using physically unclonable function based on logic-transistor-compatible poly-crystalline-Si channel FinFET technology High performance dual-gate ISFET with non-ideal effect reduction schemes in a SOI-CMOS bioelectrical SoC Physics-based compact modeling framework for state-of-the-art and emerging STT-MRAM technology
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1