Bandgap engineering in 2D layered materials

Abstract

Bandgap engineering is a powerful technique for the design of new electronic and optoelectronic devices. Different from traditional approaches that rely on sophisticated material synthesis systems, we demonstrate that bandgap engineering is feasible in 2D layered materials through electric field control. We will show that a bandgap of ~200meV can be opened in bilayer graphene, while a large bandgap reduction is achievable in bilayer MoS2. More importantly, this spontaneous field-controlled bandgap tuning occurs during device operation, which creates a new platform to design novel electronic devices with dynamic bandwidth.