Capacitive accelerometer with high aspect ratio single crystalline silicon microstructure using the SOI structure with polysilicon-based interconnect technique

Abstract

We have developed a new processing technique for a capacitive mechanical sensor with a single crystalline silicon microstructure using the SOI structure which enables electrical isolation and interconnected wiring. This technique can make the sensor surface completely flat, allowing the formation of a cap for resin molding and a vacuum package for an angular rate sensor.