Recent changes in our understanding of EL2 in GaAs

G. Baraff
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引用次数: 1

Abstract

EL2 is an intrinsic, metastable donor defect which is important in making semi-insulating GaAs. Remarkably, even after a decade of intense investigation, the microscopic nature of the defect is still controversial. There are two models which must still be considered seriously, namely that EL2 is the isolated As/sub Ga/ antisite, and that EL2 also contains an arsenic interstitial on the [111] axis. This paper will comment on some of the experiments used to support each of the two models, and will discuss attempts to reconcile the two.
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最近我们对GaAs中EL2理解的变化
EL2是一种固有的亚稳态供体缺陷,在制备半绝缘GaAs中起着重要的作用。值得注意的是,即使经过十年的深入研究,该缺陷的微观性质仍然存在争议。有两个模型仍然必须认真考虑,即EL2是孤立的As/sub Ga/对位,EL2在[111]轴上也含有砷间隙。本文将评论一些用于支持这两个模型的实验,并将讨论调和这两个模型的尝试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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