{"title":"Carrier control by neutron-transmutation doping of semi-insulating GaAs","authors":"T. Benchiguer, B. Marí, C. Schwab","doi":"10.1109/SIM.1992.752675","DOIUrl":null,"url":null,"abstract":"The photoquenching of the paramagnetic As/sup +//sub Ga/ -related antisites in semi insulating GaAs shows evidence for a metastability akin to that of EL2. To test a recent model of this phenomenon based on hindered charge transfers between donors and acceptors, neutron transmutation has been used to study the effect of additional dopants. The experiment shows the strong effect of residual acceptor related lattice damage, but in overall agrees with the charge transfer model in a comparison with the traditional configurational change model.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"1155 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The photoquenching of the paramagnetic As/sup +//sub Ga/ -related antisites in semi insulating GaAs shows evidence for a metastability akin to that of EL2. To test a recent model of this phenomenon based on hindered charge transfers between donors and acceptors, neutron transmutation has been used to study the effect of additional dopants. The experiment shows the strong effect of residual acceptor related lattice damage, but in overall agrees with the charge transfer model in a comparison with the traditional configurational change model.
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